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Aurora Integrated Plasma Equipment 整合式電漿電源供應器 IPE 300

Application Range In Plasma Systems

PVD 物理氣相沉積
HDP-CVD 高密度化學氣相沉積
Capacitively coupled plasma (CCP) 電容耦合電漿 and Inductively Coupled Plasma ( ICP)感應耦合電漿系統.
Reactive Ion Etching (RIE) 電漿蝕刻
PECVD (Plasma Enhanced Chemical Vapor Deposition) 電漿輔助化學沉積
 Plasma Clean System 電漿清潔系統
 Atmospheric Plasma System 常壓大氣電漿系統
 Biomedical-Biochip 生物醫學-生物晶片
 Nano-materials 奈米材料

Aurora IPE 300 Integrated Plasma Equipment

  • Model: Aurora IPE 300

    System Specification
    Input: AC90V-240V,50-60HZ,6A
    RF Output Power: MAX 200W (Optional 300W)
    Conforms to FCC and CE.
    Frequency:13.56MHZ +/- 50PPM
    Power Range Adjustment: continuous 1 W to 200 W
    Output Impedance:3ohm to 50ohm
    PID Temperature Control: Source Constant heating
    Real Time Automatching (up to 1,000 W)(1.5 KW Optional)
    DC Pulse Trigger
    Air Cooling
    Dimension (WxDxH): 482 X 560 X 202 mm
    Weight: about 80 lbs.氣體輸出入控制模組
     Main Gas Flow Range: 0-30 SLM
     Reactive Gas Flow Range: 0-5 SLM
     Connector: 6 mm or 1/4 inch Speed connector